Investigation of cubic single crystal HfO2/Si interface under in-plane biaxial tensile strain
Materials Letters(2017)
Abstract
•We creatively realize band alignment of HfO2/Si interface under in-plane biaxial tensile strain.•Impact of band offsets on leakage current is investigated.•The role of oxygen interstitial and vacancy in MOS devices is analyzed.
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Key words
Interface,HfO2,Biaxial strain,Oxygen defect
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