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Investigation of cubic single crystal HfO2/Si interface under in-plane biaxial tensile strain

Li-Bin Shi,Ming-Biao Li,Xiao-Ming Xiu,Xu-Yang Liu,Kai-Cheng Zhang,Yu-Hui Liu,Chun-Ran Li,Hai-Kuan Dong

Materials Letters（2017）

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Abstract
•We creatively realize band alignment of HfO2/Si interface under in-plane biaxial tensile strain.•Impact of band offsets on leakage current is investigated.•The role of oxygen interstitial and vacancy in MOS devices is analyzed.
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Key words
Interface,HfO2,Biaxial strain,Oxygen defect
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