Silicon-Quantum-Dot Light-Emitting Diodes With Interlayer-Enhanced Hole Transport
IEEE Photonics Journal(2017)
摘要
Despite the technological importance of silicon quantum dots (Si QDs) which are solely made of abundant and nontoxic Si, Si-QD light-emitting diodes (LEDs) clearly lag behind those based on other QDs, especially Cd- or Pb-containing QDs. It is imperative that novel measures should be taken to boost the performance of Si-QD LEDs. Here, we demonstrate that Si-QD LEDs can work much more efficiently a...
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关键词
Silicon,Light emitting diodes,Indium tin oxide,Current density,Zinc oxide,II-VI semiconductor materials,Performance evaluation
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