Quasi-Schottky-Barrier UTBB SOI MOSFET for Low-Power Robust SRAMs

Hamdam Ghanatian,Seyed Ebrahim Hosseini,Behzad Zeinali,Farshad Moradi

IEEE Transactions on Electron Devices（2017）

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摘要

This paper presents a low-power robust static random access memory (SRAM) using a novel quasi-Schottky-barrier ultrathin body and ultrathin buried oxide (UTBB) silicon-on-insulator (SOI) device. In the proposed device, the drain terminal is highly doped and a metallic source terminal is used. Given the proposed structure, asymmetric characteristics will be achieved according to the drain-source bi...

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关键词

Silicon,Random access memory,Computer architecture,Junctions,MOSFET,Lattices

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