Ino.22Gao.78As/GaAs量子阱光致发光谱电子辐照效应研究
Acta Optica Sinica(2017)
Abstract
对未掺杂的In0.22 Ga0.78As/GaAs量子阱材料开展了能量为1 MeV、电子注量达1×1016/cm2的电子束辐照实验.实验结果显示,电子束轰击量子阱材料,通过能量传递在材料中引入缺陷,导致光致发光减弱;电子束辐照后的量子阱中同时存在应力释放和原子互混现象,导致量子阱的发光峰先红移后蓝移;辐照后的量子阱发光波长取决于应变弛豫和扩散的共同作用.
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Key words
materials,irradiation,damage,photoluminescence spectrum,quantum well
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