An accurate model for predicting high frequency noise of nanoscale NMOS SOI transistors

Solid-State Electronics（2017）

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摘要

•A new combined HF short channel noise model that uses only one fitting parameter.•A HF NMOS model for a commercial 45nm CMOS SOI technology.•Model validation by a practical RF low noise amplifier.

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关键词

CMOS,High frequency model,Microwave frequency,Noise,Large-signal,Silicon on insulator (SOI)

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