Transport characteristics of double gate n-channel junctionless transistor
2016 9th International Conference on Electrical and Computer Engineering (ICECE)(2016)
Abstract
In this work, Electrostatic and transport characteristics of symmetric double gate n-channel junctionless transistor have been investigated through numerical simulation. A 1-D self consistent analysis of coupled Schrodinger-Poisson equation has been performed. Channel mobile charge density has been obtained and studied for variations in device dimensions and biasing voltages. A simplified ballistic transport assumption has been applied to show the variations of drain current with device parameters. Finally transconductance has been extracted with respect to biasing gate voltage.
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Key words
Junctionless,Partial Depletion Mode,Self Consistent Solution,Ballistic Transport,Transconductance
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