Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects

Two different displacement damage experiments were performed on CBRAM cells. In one experiment, conductive bridging random access memory (CBRAM) cells were exposed to 14 MeV neutrons to a total fluence of 3.19 × 1013 n/cm2. In the second test, CBRAM cells were bombarded with 200 keV Si2+ ions. In both the experiments, the high resistance and low resistance states (LRSs) of the cells were observed ...