Fully BEOL compatible TaOx-based selector with high uniformity and robust performance
2016 IEEE International Electron Devices Meeting (IEDM)（2016）
摘要
We report a novel TaOx-based selector with trapezoidal band structure, formed by rapid thermal annealing in O
2
plasma. Salient features were successfully achieved, such as high current density (1MA/cm
2
), high selectivity (5×10
4
), low off-state current (~10 pA), robust endurance (>10
10
), self-compliance and excellent uniformity. The device is composed of fully CMOS-compatible materials and has no thermal budget compatibility concerns. Furthermore, the selector was fabricated in 1kb crossbar array and the integrated 1S1R device shows high nonlinearity in low resistance state (LRS), which is quite effective to solve the sneaking current issue. The demonstrated high performance selector device here shows high potential on manufacturing large scale crossbar array.
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关键词
fully BEOL compatible based selector,trapezoidal band structure,rapid thermal annealing,O2 plasma annealing,fully CMOS-compatible materials,crossbar array,integrated 1S1R device,low resistance state,LRS,sneaking current,high performance selector device,storage capacity 1 Kbit,TaOx
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