Systematic Validation of 2x Nm Diameter Perpendicular Mtj Arrays and Mgo Barrier for Sub-10 Nm Embedded Stt-Mram with Practically Unlimited Endurance
2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2016）
Key words
embedded STT-MRAM,CMOS technology,barrier reliability,perpendicular magnetic tunnel junction array,pMTJ array,time-dependent dielectric breakdown property,TDDB property,write-to-breakdown voltage window measurement,size 70 nm to 25 nm,bit rate 1 Gbit/s,size 45 nm,MgO
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined