High Speed Performance Of Iii-Nitride Laser Diode Grown On (20(2)Over-Bar(1)Over-Bar) Semipolar Plane For Visible Light Communication

III-nitride light emitting diodes (LEDs) have been used for many applications covering the spectrum of ultraviolet (UV) to visible light (VL). Despite of significant improvements on solid-state lighting, LEDs still suffer significant loss at high carrier density, commonly referred as efficiency [1]. However, compared to LEDs, laser diodes (LDs) have higher power per chip and the absence of droop above lasing threshold. In addition to the advantage of solid-state lighting, LDs can be modulated at much higher frequency than LEDs.