Design and fabrication of 1.2kV 4H-SiC DMOSFET

Runhua Huang,Yonghong Tao,Song Bai,Gang Chen,Ling Wang,Rui Li,Yun Li,Zhifei Zhao

2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)（2016）

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摘要

A 4H-SiC MOSFET with breakdown voltage higher than 1200V has been successfully designed and fabricated. Numerical simulations have been performed to optimize the parameters of DMOSFET. The n-type epilayer is 10 μm thick with a doping of 6×10 ¹⁵ cm ^-3 . The devices were fabricated with a floating guard ring edge termination. The drain current Id = 10 A at Vg = 20 V, corresponding to Vd = 2.0 V.

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关键词

DMOSFET,breakdown voltage,n-type epilayer,floating guard ring edge termination,drain current,voltage 1.2 kV,current 10 A,voltage 20 V,voltage 2 V,SiC

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