HfO 2 -Based Highly Stable Radiation-Immune Ferroelectric Memory

In this letter, HfO2-based ferroelectric random access memory (FeRAM) with metal-insulator-metal structure is studied for the first time under radiation conditions. V-doped HfO2-based FeRAM devices show high immunity to 60Co γ ray radiation. Basic FeRAM parameters, such as leakage current, permittivity, remanent polarization, endurance, and fatigue, show almost no degradation after γ ray radiation...