SiP assembly and application using glass substrate with through vias

This paper is to present an assembly structure of system-in-package (SiP) module using the glass substrate with through-glass via (TGV) where the diameter of TGV is 100μm and the glass substrate is 200μm thick. The glass-substrate is first laminated with a dielectric material on the surface and in through vias; then drill through holes in the dielectric material inside the vias, respectively. The copper is later plated on the wall in the dielectric through hole and on the surface of the dielectric material. This method is called via-in-via (ViV). Two BGA packaged SRAM chips are mounted on the top side of ViV glass substrate to form a ViV SiP module where the two SRAM chips are connected in series with path-delay extraction circuits. The ViV SiP module is mounted on a PCB test board for the measurement of path delay to study the functional performance of the ViV TGV substrate.