Electronic excitation induced structural and optical modifications in InGaN/GaN quantum well structures grown by MOCVD
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms（2017）
Abstract
•Effects on InGaN/GaN QW structures by Au7+ (100MeV) ion have been investigated.•Structural defects of the irradiated InGaN/GaN QW structures are determined.•The intermixing effect in irradiated InGaN/GaN QW structures were understood.•Modified luminescence was observed in the PL spectra due to heavy ion irradiation.•Surface modification was observed due to the heavy ion irradiation.
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Key words
InGaN,Quantum well,Electronic excitation,Intermixing effects,Photoluminescence
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