Measurement and Modeling Techniques for InP-Based HBT Devices to 220GHz

In this paper a measurement method for InP-Based HBT devices to 220GHz is presented. S-parameters are deembedded using TRL calibration structures (70-220GHz) fabricated on-wafer. The results shown in this paper are characterized at 75-110GHz and 140-220GHz. Good agreement between the low and high frequency measurement is achieved demonstrating the capability of TRL calibration in S-parameters extraction. Small signal equivalent circuit for InP DHBT up to 220G Hz is also demonstrated. Excellent agreements between measured and simulated data are obtained in the frequency range of 0.2 to 220 GHz. A six-stage amplifier MMIC designed based on the HBT model is also presented. Measurement results show that the small signal gain of the amplifier is greater than 15 dB over 140-190 GHz.