Mid-Infrared Plasmonic Platform Based On N-Doped Ge-On-Si: Molecular Sensing With Germanium Nano-Antennas On Si

L. Baldassarre,E. Sakat,M. Bollani,A. Samarelli,K. Gallacher,J. Frigerio,G. Pellegrini,V. Giliberti,A. Ballabio,M. P. Fischer,D. Brida,G. Isella,D. J. Paul,M. Ortolani,P. Biagioni

2016 41ST INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)（2016）

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Abstract

CMOS-compatible, heavily-doped semiconductor films are very promising for applications in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate n-type doped germanium epilayers grown on Si substrates. We design and realize Ge nanoantennas on Si substrates demonstrating the presence of localized plasmon resonances, and exploit them for molecular sensing in the mid-infrared.

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Key words

localized plasmon resonances,n-type doped germanium epilayers,dielectric function,CMOS-compatible heavily-doped semiconductor films,germanium nanoantennas,molecular sensing,n-doped Ge-on-Si,mid-infrared plasmonic devices,Ge-Si

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