B13-P-01Temperature Characterization of Self-heating in GaN-based Transistors by Cathodeluminescence Spectroscopy

GaN-based high electron mobility transistors (HEMTs) have shown exceptional promise for high frequency, high-voltage, and high-power applications [ 1 ]. However, the high power dissipation for GaN-based HEMTs can result in substantial self-heating effect, which will reduce the performance reliability. we performed a high resolution measurement of channel temperature rise in GaN-based HEMTs. The changes of temperature distribution and peak temperature with the power density in the source-gate and gate-drain opening of active AlGaN/GaN HEMTs are determined. This method can measured locally device temperature with the high spatial resolution and 5°C temperature accuracy, as well as have small effect on the device characteristics during the temperature measurement. The technique should be useful to design reasonable structures of high electron mobility transistors.