Two methods of tuning threshold voltage of bulk FinFETs with replacement high-k metal-gate stacks

•Form halo & PTSP doping profile in fin using an implantation after dummy gate removal.•The halo & PTSP dose is adaptive to gate length, enabling VTH variation reduction.•The implantation for halo & PTSP does not degrade FinFET performance, SS, and DIBL.•Shift VTH by −0.43V/+0.11V for N/P-FinFETs by implanting P+/BF2+ into metal gate.•Improve N/P-FinFET PBTI/NBTI respectively with P+/BF2+ implanted metal gate.