600 GHz resistive mixer S-MMICs with integrated multiplier-by-six in 35 nm mHEMT technology
2016 11th European Microwave Integrated Circuits Conference (EuMIC)(2016)
摘要
This paper describes the development and fabrication of two 600 GHz resistive sub-harmonic down-conversion mixer submillimeter-wave integrated circuits (S-MMICs), formed by a combination of a frequency multiplier-by-six sub-circuit and a fundamental mixer sub-circuit. The mixer circuits were designed in a grounded coplanar waveguide transmission line technology (GCPW) with 14 μm and 7 μm ground-to-ground-spacing. Both versions were fabricated in a 35 nm metamorphic high electron mobility transistor (mHEMT) technology. With a 2 dBm W-band local oscillator (LO) signal the best mixer S-MMIC achieves a maximum conversion gain of -9.2 dB together with an operation frequency range of 76 GHz from 530 to 606 GHz.
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关键词
metamorphic high electron mobility transistor (mHEMT),resistive mixer,submillimeter-wave integrated circuit (S-MMIC),grounded coplanar waveguide (GCPW),frequency multiplier
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