N-Zno/P-Gan Heterojunction Light-Emitting Diodes Featuring A Buried Polarization-Induced Tunneling Junction

n-ZnO/p-GaN heterojunction light-emitting diodes with a p-GaN/Al0.1Ga0.9N/n(+)-GaN polarization-induced tunneling junction (PITJ) were fabricated by metal-organic chemical vapor deposition. An intense and sharp ultraviolet emission centered at similar to 396 nm was observed under forward bias. Compared with the n-ZnO/p-GaN reference diode without PITJ, the light intensity of the proposed diode is increased by similar to 1.4-folds due to the improved current spreading. More importantly, the studied diode operates continuously for eight hours with the decay of only similar to 3.5% under 20 mA, suggesting a remarkable operating stability. The results demonstrate the feasibility of using PITJ as hole injection layer for high-performance ZnO-based light-emitting devices. (C) 2016 Author(s).