Current-Injection Terahertz Lasing In Distributed-Feedback Dual-Gate Graphene-Channel Field-Effect Transistor

2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)(2016)

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摘要
A distributed-feedback (DFB) dual-gate graphene-channel transistor was fabricated as a current-injection terahertz laser. A single mode emission at 5.2 THz was observed at 100K beyond the threshold carrier injection level. Spectral narrowing with increasing the carrier injection around the threshold was also observed. The result is still preliminary level but the linewidth fairly agrees with calculation based on DFB-Fabry-Perrot hybrid-mode modeling.
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关键词
DFB-Fabry-Perrot hybrid-mode modeling,spectral narrowing,distributed-feedback dual-gate graphene-channel field-effect transistor,current-injection terahertz lasing,frequency 5.2 THz,C
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