A New Electron Bridge Channel 1T-DRAM Employing Underlap Region Charge Storage
IEEE Journal of the Electron Devices Society(2017)
摘要
We experimentally demonstrate a new type of silicon-based capacitorless one-transistor dynamic random access memory (1T-DRAM) with an electron-bridge channel. The fabrication steps are fully compatible with modern CMOS technology. An underlap device structure is exploited and positive charges are primarily stored in drain-side and source-side p-type pseudo-neutral regions under the oxide spacer. T...
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关键词
Logic gates,Programming,Random access memory,Performance evaluation,Impact ionization,Fabrication,Capacitance
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