DC analysis of a MOS based NDR circuit

Mili Sarkar,Subhajit Dutta Chowdhury,D. Das,Sabarno Chowdhury,Chayanika Dhar Choudhuri,Megha Basu

ieee annual information technology electronics and mobile communication conference（2016）

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摘要

The DC analysis of a Metal Oxide Semiconductor Field Effect Transistor based negative differential resistor (NDR) is investigated. V-I characteristic of NDR is obtained by adjusting the parameters of NMOS transistors. Here the NDR circuit exhibits lambda type V-I characteristic. The circuit is easy to fabricate as all the components used here are NMOS. To study the characteristic curve of the NDR circuit CADENCE software is used. The circuit is designed based on the standard 0.18um technology. Analytical DC analysis is verified by MATLAB.

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关键词

Negative Differential Resistor (NDR), NMOS, DC analysis

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