Parametric distribution and feature level analysis of different types of gated resistors

Gated resistor is an accumulation mode device without any junction (p-n junction or Schottky junction) in which the channel doping concentration is generally equal to doping concentration on the source and drain. Gated resistors have been fabricated to avoid the super steep and troublesome doping profile of conventional Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It simplifies the current-flow due to the elimination of Semiconductor/Insulator interface to a great extent. The advantage of gated resistor includes the avoidance of the junction by which the process flow and architecture are highly simplified. Its self alignment behavior avoids the thermal budget needed for dopant activation after gate stack formation. Ultrathin device layer of very highly doped semiconductor is present in this device. Here we have analyzed different types of gated resistors, their architectures, characteristics, pros and cons. Different types of gated resistors included here are Multiple Independent Gate Field Effect Transistor (MIGFET) having more than one gate independent of each other, Junction-Less Tunnel Field Effect Transistor (JL-TFET) where tunneling effect occurs, Bulk Planar (BP) Gated Resistor forming over the bulk silicon, Silicon On Insulator (SOI) Gated Resistor in the presence of spacer and Vertical Slit Field Effect Transistor (VeSFET) where vertical silicon channel and metal pillar are present.