Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)（2016）
Abstract
The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300x suns. EQE measurements show little cell performance decrease up to 500 °C. Repeated measurements indicate the device to be thermally robust.
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Key words
high-band gap high temperature III-nitride solar cell,concentrated solar power technology,III-N material,thermal receiver,concentrated solar plant,solar cell,MQW structure,material quality,EQE measurements,temperature 450 degC,voltage 2.4 V,temperature 293 K to 298 K,voltage 1.7 V,GaN-InGaN
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