As2S3 thin films deposited by atomic layer deposition

As2S3 thin films were deposited on glass and silicon (100) substrates by atomic layer deposition from tris(dimethylamino) arsine [(CH3)(2)N)(3)As] and H2S. Amorphous films were deposited at an exceptionally low temperature of 50 degrees C. No film growth was observed at higher temperatures. The films were amorphous and contained H and C as the main impurities. The refractive index was 2.3 at 1.0 mu m. The films were sensitive to air humidity, but their stability was significantly improved by a protective Al2O3 layer. (C) 2016 American Vacuum Society.