Formation of InGaAs fins by atomic layer epitaxy on InP sidewalls

We describe a fabrication process which forms InGaAs fins with sub 10nm thickness and 180nm height. The process flow requires no semiconductor dry-etch, thereby avoiding surface damage arising from such processes. Instead, InGaAs fins are formed using nanometer controlled atomic layer epitaxial growth, using tertiarybutylarsine, upon InP sidewall which are eventually selectively etched. Such fins can serve as channels of field effect transistors, allowing excellent electrostatics and with potentially high operating current per fin. (C) 2014 The Japan Society of Applied Physics