Physical stability against hydrogen plasma for ZnInSnO thin films deposited by combinatorial RF magnetron sputtering
JAPANESE JOURNAL OF APPLIED PHYSICS(2016)
Abstract
We investigated the physical stability of ZnInSnO thin films against hydrogen plasma using a plasma-enhanced chemical vapor deposition (PECVD) system. The transmittance and resistivity characteristics of the entire ZnInSnO films showed very little degradation after the hydrogen plasma treatment. However, the deposited films with a zinc content of : 8.8 at.% [Zn/(In + Sn + Zn), at. %] showed some optical and electrical property degradation. Within this compositional range, the resistivity of the films treated with hydrogen plasma increased compared with that of the as-deposited films. For the film with a zinc content of 7.6 at. %, the transmittance decreased by 21% compared with that of the as-deposited ZnInSnO film (at a standard optical wavelength of 2000 nm). The figure of merit of the deposited ZnInSnO thin films with a zinc content of >8.8 at.% was physically stable against hydrogen plasma. We found that the deposited ZnInSnO thin films with a zinc content above 8.8 at.% have high physical stability against hydrogen plasma. (C) 2016 The Japan Society of Applied Physics
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Key words
zninsno,hydrogen plasma,combinatorial rf magnetron,thin films
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