THz bandwidth InP HBT technologies and heterogeneous integration with Si CMOS
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)(2016)
摘要
Through aggressive lithographical and epitaxial scaling, the bandwidths of InP-based heterojunction bipolar transistors have been extended to THz frequencies. At 130nm emitter dimensions, transistors with maximum frequencies of oscillation (f
max
) of >1THz have been demonstrated with accompanying circuit demonstrations at 670GHz. At 250nm emitter dimensions, high efficiency and high power density mm-wave power amplifiers covering E-band (71GHz) to G-band (235GHz) have been fabricated. The utility of these high performance transistors can be further enhanced through heterogeneous integration with Si CMOS. We have demonstrated wafer-scale 3D integration of InP and Si using a low temperature oxide-to-oxide bonding process with embedded Cu interconnects.
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关键词
Indium Phosphide,HBT,terahertz,heterogeneous integration
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