Thermal effect and compact model in three-dimensional (3D) RRAM arrays

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)(2016)

Cited 4|Views15
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Abstract
A physical and electro-thermal Compact model for thermal effect and crosstalk in 3D RRAM arrays has been firstly proposed. The simulation results show that the transient thermal effect will dominate reset process. The proposed model is based on 3D Fourier heat flow equation and electro-thermal analogy which can couple thermal network to its electrical schematic. The comparison between the Compact model simulation results and numerical simulation shows a good accuracy. The proposed electro-thermal model then was written in Verilog-A by using Spectre on Cadence platform and had been verified by using ANSYS software.
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Key words
resistive switching memory,three dimentional integration,compact model,thermal effect
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