Terahertz Monolithic Integrated Circuits (Tmics) Array Antenna Technology On Gan-On-Low Resistivity Silicon Substrates
2016 41ST INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)(2016)
摘要
In this paper, we have demonstrated a viable microstrip array patch antenna technology for the first time on GaN-on-low resistivity silicon (LR-Si) substrates (rho < 40 Omega cm) at H-band frequencies (220-325 GHz). The developed technology is compatible with standard MMIC technology with no requirement for high temperature processes. To mitigate the losses presented by the substrate and to enhance the performance of the integrated array antenna at THz frequencies, the driven patch is shielded by silicon nitride and gold layer in addition to a layer of benzocyclobutene (BCB). The demonstrated 4x1 array integrated antenna showed a measured resonance frequency in agreement with our simulation at 0.27 THz; a measured S11 as low as -41 dB was obtained. A directivity, gain and radiation efficiency of 11.2 dB, 5.2 dB, and 20% respectively was observed from the 3D EM model for a 5 mu m BCB inset. To the authors' knowledge, this is the first demonstration of a THz integrated microstrip array antenna for TMIC technology; this developed technology is promising for high performance III-V electronic material on low resistivity/high dielectric substrates.
更多查看译文
关键词
terahertz monolithic integrated circuits,TMIC,array antenna technology,GaN-on-low resistivity silicon substrates,LR-Si substrates,microstrip array patch antenna technology,H-band frequencies,MMIC technology,integrated array antenna,benzocyclobutene layer,BCB layer,resonance frequency,THz integrated microstrip array antenna,III-V electronic material,frequency 220 GHz to 325 GHz,GaN,Si
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要