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HV ESD diodes investigation under vf-TLP stresses: TCAD approach

2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)(2016)

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Abstract
Very fast TLP stresses applied to HV ESD diodes in forward conduction are able to reproduce well known and CDM typical effects as Forward Recovery. In this work a full RLC vf-TLP model is introduced in order to investigate HV ESD diodes electrical and physical behavior using TCAD mixed-mode simulations.
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Key words
HV ESD diodes,very fast TLP stresses,vf-TLP stresses,forward conduction,charged device model,CDM typical effects,forward recovery,RLC vf-TLP model,electrical behavior,physical behavior,TCAD mixed-mode simulations
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