High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure
IEEE Electron Device Letters(2016)
Abstract
Ultra-thin-barrier (UTB) AlGaN/GaN heterostructure is utilized for fabrication of normally-OFF GaN metal- insulator-semiconductor high-electron-mobility transistors (MISHEMTs). The sheet resistance of 2-D electron gas in the UTB Al0.22Ga0.78N(5-nm)/GaN heterostructure is effectively reduced by SiNx passivation grown by low-pressure chemical vapor deposition, from 2570 to 334 Q/D. The fabricated Al...
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Key words
Aluminum gallium nitride,Wide band gap semiconductors,Passivation,HEMTs,MODFETs,Logic gates,Gallium nitride
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