Material gain simulation of the GaInNAs/GaAs semiconductor optical amplifier (SOA)

In this paper, we present theoretical studies of the effect of nitrogen incorporation on the material gain in the Ga0.8In0.2NyAs1-y/GaAs semiconductor optical amplifier. For the calculation, we have used the semi-empirical band anti-crossing (BAC) model which has been most successful in explaining the band gap bowing effect in GaInAsN alloys. From this model, we have calculated the material gain in the active layer for this semiconductor quantum well derived from the energies transition as well as the densities of state of this (SOA) for different nitrogen concentrations (0.01, 0.02, 0.025 and 0.03).