Design and fabrication of high-k filled sub-100 nm gap resonators with embedded dielectric field effect transistor for ultra high frequency applications
2016 IEEE Silicon Nanoelectronics Workshop (SNW)（2016）
Abstract
A novel fabrication process for the integration of Field Effect Transistors in electrostatically actuated bulk acoustic resonators is demonstrated. ALD-deposited HfO
2
is used as a high-k dielectric for the FET and as an etch-stop layer during the release of the resonator structure as well, enabling the creation of sub-100 nm air-gap resonators with FET amplification enhancement.
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Key words
high-k filled resonators,embedded dielectric field effect transistor,ultrahigh frequency applications,field effect transistors,electrostatically actuated bulk acoustic resonators,atomic layer deposition,etch stop layer,HfO2
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