Demonstration of record SiGe transconductance and short-channel current drive in High-Ge-Content SiGe PMOS FinFETs with improved junction and scaled EOT
2016 IEEE Symposium on VLSI Technology(2016)
摘要
We demonstrate high-performance (HP) High-Ge-Content (HGC) SiGe pMOS FinFETs with scaled EOT and improved junction. For the first time, SiGe FinFET EOT scaling down to ~7Å has been achieved. In addition, improved junction and series resistance has been demonstrated for HGC SiGe, by a proper choice of spacer thickness and interface-layer as well as hot ion-implant (I/I), resulting in significant R
on
reduction down to 250 and 200Ω.μm, respectively. We report the highest “SiGe extrinsic g
m
” reported to date with g
m, LIN
=0.5mS/μm and g
m, SAT
=2.7/2.5mS/μm at V
DD
=1.0/0.5V, the highest HGC SiGe I
on
=0.45mA/μm at fixed HP I
off
=100nA/μm at V
DD
=0.5V and the highest pMOS FinFET performance reported to date at sub-35nm L
G
.
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关键词
hot ion-implant,interface layer,spacer thickness,series resistance,junction resistance,high-performance SiGe pMOS FinFET,scaled EOT,improved junction,short-channel current drive,record SiGe transconductance,high-Ge-content SiGe PMOS FinFET,voltage 0.5 V,voltage 1.0 V,SiGe
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