Extremely low power c-axis aligned crystalline In-Ga-Zn-O 60 nm transistor integrated with industry 65 nm Si MOSFET for IoT normally-off CPU application
2016 IEEE Symposium on VLSI Technology(2016)
摘要
For the first time, laboratory 60 nm c-axis aligned crystalline In-Ga-Zn-O (CAAC-IGZO) oxide semiconductor FET (OSFET) was successfully integrated with industrial 65 nm Si MOSFET (SiFET). By this hybrid process, OSFET with extremely low off-state leakage level ~zA (1×10
-21
A) was fabricated, while traditional Si device can only reach 1×10
-12
A leakage level. For IoT (Internet of Things) applications, normally-off CPU (Noff CPU) fabricated by this hybrid process achieved 86% reduction of power consumption. The hybrid process can be extended to other applications like eDRAM, image sensor and FPGA.
更多查看译文
关键词
Noff CPU,IoT normally-off CPU application,off-state leakage level,SiFET,Si MOSFET,CAAC-IGZO OSFET,c-axis aligned crystalline In-Ga-Zn-O oxide semiconductor FET,size 60 nm,size 65 nm,In-Ga-Zn-O,Si
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要