Top-down InGaAs nanowire and fin vertical FETs with record performance

Vertical nanowires and for the first time vertical fins, dry etched from the same lattice matched InGaAs on InP, are used to fabricate MOSFETs. Single and multiple pillar array devices exhibit excellent electrostatics with min SS = 68mV/dec (V _DS =0.05V) and max G _m = 580μS/μm (V _DS =0.4V). These are the first III-V pillar array devices fabricated with top-down approach. Linear I _on scaling with effective width and overall V _th uniformity makes this result the first step in assessing the manufacturability of this integration scheme. A reliability analysis puts these vertical MOSFETs in line with other IIIV devices with similar gate stack, indicating that the IIIV etch does not introduce additional interface defects.