A 670 GHz Low Noise Amplifier with <10 dB Packaged Noise Figure

William R. Deal,Alexis Zamora,K. Leong,P.H. Liu,W. Yoshida, J. Zhou,Mike Lange,Ben S. Gorospe,Khanh Nguyen,Xiaobing Mei

IEEE Microwave and Wireless Components Letters（2016）

引用 29|浏览15

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摘要

In this letter, a packaged Low Noise Amplifier (LNA) operating at 670 GHz is presented. The LNA uses a new generation of 25 nm InP HEMT with 1.5 THz fMAX. The eight-stage amplifier shows approximately 16 dB associated gain in package with a noise figure ranging from 9.4-9.9 dB measured across a 15 GHz bandwidth. These results represent better than 3 dB improvement in sensitivity to previously publ...

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关键词

Indium phosphide,III-V semiconductor materials,HEMTs,MMICs,Gain,Noise measurement

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