Study of piezo-tunnel effect in Metal/A2 O3 /metal junctions
2016 IEEE International Conference on Dielectrics (ICD)（2016）
Abstract
In this work, the electrical transport in Al/A
2
O
3
/Pt and Al/A
2
O
3
/Al junctions under mechanical stress was investigated. The junctions were fabricated by evaporation for the metals (with shadow mask lithography) and Atomic Layer Deposition (ALD) for the A
2
O
3
. First, IV characteristics were extracted from the unstressed sample and these curves were fitted with the Fowler-Nordheim current expression to identify the conduction mechanism. Then, gauges were tested under mechanical strain using the beam deflection method. Gauge factors of -34 for Al/A
2
O
3
/Al and -70 for Al/A
2
O
3
/Pt junctions were measured. Finally, the geometrical gauge factor is discussed and a possible effect of the variation of the Metal/A
2
O
3
interface's barrier height under stress is suggested as a plausible cause for the difference in gauge factor observed between the two junction types.
MoreTranslated text
Key words
Piezotunneling,Fowler-Nordheim tunneling,Tunnel effect gauges,A2O3,Electrical transport in dielectrics,ALD
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined