Semipolar (11-22) InGaN-Based Light-Emitting Diodes with Low Defects Grown on m-Plane Sapphire Using Metalorganic Chemical Vapor Epitaxy

In this study, we investigated the growth of (11-22) semipolar InGaN light-emitting diodes (LED) with low defects using metalorganic chemical vapor deposition. Semipolar InGaN LEDs were grown on three kind of templates: m-sapphire (sample A), a SiO2 stripe mask (sample B) and a combination of the SiNx interlayer and SiO2 stripe mask techniques (sample C). The reduction of basal stacking fault density was analyzed by applying the X-ray rocking curve of the off-axis planes and transmission electron microscopy. The basal stacking fault densities of samples A, B, and C were 2.9 x 10(5), 4.6 x 10(4) and 2.8 x 10(4) cm(-1), respectively. These results were attributed to the blocking of the basal stacking faults by the SiNx interlayer and SiO2 stripe mask. In addition, the cathodolu-minescence intensity of sample C was shown to be about 3.5 times higher than that of sample A, indicating that the optical properties of semipolar GaN could be significantly enhanced by reducing defects. Consequently, the electroluminescence intensities of semipolar InGaN blue LEDs grown on samples B and C were approximately 4 and 6 times higher than that of the LED for sample A, respectively.