Nanocrystalline ZnO TFTs Using 15-nm Thick Al 2 O 3 Gate Insulator: Experiment and Simulation

Thin-film transistors were fabricated using 45-nm thick ZnO deposited by pulsed laser deposition and 15-nm thick Al2O3 gate insulator deposited by atomic layer deposition. A 1-D model with a constant density of interface states above and below the conduction band edge is used to explain the current-voltage characteristic. This model does not create distortion of transconductance versus gate voltag...