Development Of 17 Kv 4h-Sic Pin Diode

The design, fabrication, and electrical characteristics of a 4H-SiC PiN diode with breakdown voltage higher than 17 kV are presented. The three-zone JTE has been used in the fabrication. Numerical simulations have been performed to optimize the parameters of the edge termination technique. The epilayer properties of the N-type are 175 mu m with a doping of 2 x 10(14) cm(-3). With the three-zone JTE, a typical breakdown voltage of 17 kV has been achieved.