Effects of argon plasma pretreatment on polar and nonpolar GaN/Al2O3 interface
2016 5th International Symposium on Next-Generation Electronics (ISNE)(2016)
Abstract
Influence of argon (Ar) plasma pretreatment on polar and nonpolar GaN surface before the deposition of Al
2
O
3
dielectric is investiged. The interface trap density (Dit) of polar (c-plane) GaN MOS capacitor with Ar plasma treatment is dramatically lower than that without plasma treatment. In contrast, the Dit of nonpolar (m-plane) GaN MOS capacitor with Ar plasma treatment is higher than that without plasma treatment, indicating that the polar and nonpolar GaN have differenent surface charges and chemical states.
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Key words
polar GaN,nonpolar GaN,interface trap density,Ar plasma treatment
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