Study Of Light-Trapping Enhanced Quantum Dot Solar Cells Based On Electrical And Optical Numerical Simulations

2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)(2016)

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摘要
We study InAs/GaAs quantum dot solar cells exploiting light trapping approaches to enhance the interband light harvesting efficiency of quantum dots. A realistic thin-film structure including a nanostructured anti-reflection coating and a planar reflector is investigated both from the optical and electrical standpoint, based on finite difference time domain electromagnetic simulations and on quantum-dot-aware transport simulations. The photovoltaic efficiency of quantum dot solar cells and reference bulk cells is analyzed for various configurations, from the single-pass -wafer-based- one to the thin-film one approaching the ideal Lambertian limit. We show that light-trapping enhancement, combined with QD selective doping, may allow the quantum dot cell to achieve photovoltaic efficiency higher than its bulk counterpart.
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关键词
solar cell, quantum dot, thin film, doping, light trapping, nanophotonic
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