Monitoring Molecular Fluxes With The Use Of Reflection Mass Spectrometry To Control The Composition Of Inxga1-Xas Films

The use of reflection mass spectrometry to control the composition of InGaAs ternary compounds is described; the technique was applied to InGaAs films grown by molecular-beam epitaxy and is shown to be efficient over a wide range of concentrations and growth rates. A special feature of the proposed technique is that the ratio of the In and Ga fluxes is measured immediately prior to the growth onset in the regime of total reflection of fluxes.