Modifying the Ni-MoS 2 Contact Interface Using a Broad-Beam Ion Source

Zhihui Cheng,Jorge A. Cardenas,Felicia McGuire,Sina Najmaei,Aaron D. Franklin

IEEE Electron Device Letters（2016）

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摘要

Charge transport at the contacts is a dominant factor in determining the performance of devices using 2D MoS2. Using a low-energy beam of Ar ions, the interface between Ni and MoS2 was modified to improve the performance in 2D field-effect transistors (FETs). This broad-beam ion source is integrated into an ultrahigh vacuum, physical vapor deposition system that allowed for in situ modification of...

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关键词

Ion beams,Field effect transistors,Ion sources,Performance evaluation,Nickel,Lattices

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