Single crystal AlGaN bulk acoustic wave resonators on silicon substrates with high electromechanical coupling
2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)(2016)
Abstract
Bulk acoustic wave (BAW) resonators using single crystal AlGaN piezoelectric films are reported. Metal-organic chemical vapor deposition (MOCVD) growth was used to obtain single crystal AlGaN films on 150-mm diameter <111> silicon substrates with (0002) XRD rocking curve FWHM of 0.37°. Series-configured 12 Ω BAW resonators with resonant frequency of 2.302GHz were fabricated with insertion loss of 0.29dB and an electromechanical coupling of 4.44%. Maximum resonator Q
max
was 1277, leading to a figure of merit (FOM) of 57. Unloaded acoustic Q
r
was 4243, leading to a FOM of 188. These FOM are the highest reported to date for MOCVD-based single crystal resonators.
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Key words
RF Filters,Silicon,Radio frequency integrated circuits,Resonator filters,Mobile communication,Piezoelectric devices,Electromechanical devices,Wide band gap semiconductors,Acoustic waves
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