Leakage Current Paths in Isolated AlGaN/GaN Heterostructures

Electrical characterization of AlGaN/GaN heterojunctions isolated by Ar-implantation identified three conduction regimes. These include an Ohmic regime below 100 V associated with conduction across the implanted area itself as well as an exponential regime above 400 V associated with a conduction across the buffer or buried interfaces with the substrate. While the extraction of activation energies...