Hermite interpolation method (HiM): compact surface potential MOSFET model based on the Hermite polynomial

Electronics Letters(2016)

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摘要
An extremely accurate yet simple form of the charge-sheet model (CSM) is developed using the third-order Hermite interpolation polynomial to model the inversion charge in the channel. This new formulation of the drain current retains the same simplicity of the most advanced surface potential compact MOSFET models based on the symmetric linearisation method (SLM). However, unlike the SLM, it is dev...
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关键词
interpolation,MOSFET,polynomials,semiconductor device models,surface potential
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